PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
SCH2201 |
NPN NPN NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications
|
Sanyo Semicon Device
|
BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管(npn型第六代赫兹宽带晶体管)
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
PEMH15115 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3 Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
PEMH13 PUMH13 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=4.7千欧姆,R2=47千欧
|
NXP Semiconductors N.V.
|
CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
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Electronic Theatre Controls, Inc.
|
BP103 Q62702-P79-S4 BP103-2 BP103-3 BP103-4 BP103- |
From old datasheet system NPN-Silizium-Fototransistor Silicon NPN Phototransistor PHOTO TRANSISTOR DETECTOR NPN-Silizium-Fototransistor Silicon NPN Phototransistor Silizium - Fototransistor硅npn型光电晶体管
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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